CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing

10.1109/ESSDER.2006.307661

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Main Authors:	Ren, C., Chan, D.S.H., Loh, W.Y., Peng, J.W., Balakumar, S., Jiang, Y., Tung, C.H., Du, A.Y., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/114547
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-114547
record_format	dspace
spelling	sg-nus-scholar.10635-1145472015-01-10T05:55:09Z CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing Ren, C. Chan, D.S.H. Loh, W.Y. Peng, J.W. Balakumar, S. Jiang, Y. Tung, C.H. Du, A.Y. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDER.2006.307661 ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference 154-157 2014-12-02T08:05:55Z 2014-12-02T08:05:55Z 2007 Conference Paper Ren, C.,Chan, D.S.H.,Loh, W.Y.,Peng, J.W.,Balakumar, S.,Jiang, Y.,Tung, C.H.,Du, A.Y.,Lo, G.Q.,Kumar, R.,Balasubramanian, N.,Kwong, D.-L. (2007). CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing. ESSDERC 2006 - Proceedings of the 36th European Solid-State Device Research Conference : 154-157. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/ESSDER.2006.307661" target="_blank">https://doi.org/10.1109/ESSDER.2006.307661</a> 1424403014 http://scholarbank.nus.edu.sg/handle/10635/114547 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/ESSDER.2006.307661
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ren, C. Chan, D.S.H. Loh, W.Y. Peng, J.W. Balakumar, S. Jiang, Y. Tung, C.H. Du, A.Y. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L.
format	Conference or Workshop Item
author	Ren, C. Chan, D.S.H. Loh, W.Y. Peng, J.W. Balakumar, S. Jiang, Y. Tung, C.H. Du, A.Y. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L.
spellingShingle	Ren, C. Chan, D.S.H. Loh, W.Y. Peng, J.W. Balakumar, S. Jiang, Y. Tung, C.H. Du, A.Y. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L. CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing
author_sort	Ren, C.
title	CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_short	CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_full	CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_fullStr	CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_full_unstemmed	CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing
title_sort	cmos compatible dual metal gate integration with successful vth adjustment on high-k hftaon by high-temperature metal intermixing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/114547
_version_	1681094845586735104

CMOS compatible dual metal gate integration with successful vth adjustment on high-k HfTaON by high-temperature metal intermixing

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