An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

An integratable dual metal gate CMOS process using an ultrathin aluminum nitride buffer layer

10.1109/LED.2003.812548

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Aluminum nitride
CMOS
Dual metal gates
Workfunction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81953
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81953

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