Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

10.1109/LED.2006.882569

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Bibliographic Details
Main Authors:	Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	CMOS Dual work function (WF) Gate first Intermixing (InM) Metal gate
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83280
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83280
record_format	dspace
spelling	sg-nus-scholar.10635-832802023-10-30T20:09:29Z Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process Ren, C. Chan, D.S.H. Loh, W.Y. Balakumar, S. Du, A.Y. Tung, C.H. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING CMOS Dual work function (WF) Gate first Intermixing (InM) Metal gate 10.1109/LED.2006.882569 IEEE Electron Device Letters 27 10 811-813 EDLED 2014-10-07T04:39:27Z 2014-10-07T04:39:27Z 2006 Article Ren, C., Chan, D.S.H., Loh, W.Y., Balakumar, S., Du, A.Y., Tung, C.H., Lo, G.Q., Kumar, R., Balasubramanian, N., Kwong, D.-L. (2006). Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process. IEEE Electron Device Letters 27 (10) : 811-813. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.882569 07413106 http://scholarbank.nus.edu.sg/handle/10635/83280 000240925900007 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	CMOS Dual work function (WF) Gate first Intermixing (InM) Metal gate
spellingShingle	CMOS Dual work function (WF) Gate first Intermixing (InM) Metal gate Ren, C. Chan, D.S.H. Loh, W.Y. Balakumar, S. Du, A.Y. Tung, C.H. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L. Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process
description	10.1109/LED.2006.882569
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Ren, C. Chan, D.S.H. Loh, W.Y. Balakumar, S. Du, A.Y. Tung, C.H. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L.
format	Article
author	Ren, C. Chan, D.S.H. Loh, W.Y. Balakumar, S. Du, A.Y. Tung, C.H. Lo, G.Q. Kumar, R. Balasubramanian, N. Kwong, D.-L.
author_sort	Ren, C.
title	Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process
title_short	Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process
title_full	Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process
title_fullStr	Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process
title_full_unstemmed	Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process
title_sort	work-function tuning of tan by high-temperature metal intermixing technique for gate-first cmos process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83280
_version_	1781784349280043008

Work-function tuning of TaN by high-temperature metal intermixing technique for gate-first CMOS process

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