Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications

Thermally robust TaTbxN metal gate electrode for n-MOSFETs applications

10.1109/LED.2004.841469

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Bibliographic Details
Main Authors: Ren, C., Yu, H.Y., Wang, X.P., Ma, H.H.H., Chan, D.S.H., Li, M.-F., Yeo, Y.-C., Tung, C.H., Balasubramanian, N., Huan, A.C.H., Pan, J.S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
CMOS
Dual-metal gate
N-type
TaTbxN
Thermal stability
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83197
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Institution: National University of Singapore

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