Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition

Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition

10.1016/j.tsf.2006.07.112

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Bibliographic Details
Main Authors: Hartono, H., Chen, P., Chua, S.J., Fitzgerald, E.A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Highly mismatched systems
InxGa1-xN layers
InN
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56166
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/56166

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