Growth of InN and its effect on InGaN epilayer by metalorganic chemical vapor deposition

• Main Authors: Hartono, H., Chen, P., Chua, S.J., Fitzgerald, E.A.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Highly mismatched systems; InxGa1-xN layers; InN
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56166
• Institution: National University of Singapore

10.1016/j.tsf.2006.07.112