Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs

10.1109/LED.2005.859950

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Bibliographic Details
Main Authors: Wang, X.P., Li, M.-F., Ren, C., Yu, X.F., Shen, C., Ma, H.H., Chin, A., Zhu, C.X., Ning, J., Yu, M.B., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
HfLaO
High-κ dielectric
Metal gate
MOSFET
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83224
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Institution: National University of Singapore

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