Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application

10.1109/LED.2006.875722

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Main Authors: Yu, X., Yu, M., Zhu, C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
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Online Access:http://scholarbank.nus.edu.sg/handle/10635/81940
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-819402023-10-26T08:07:36Z Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application Yu, X. Yu, M. Zhu, C. ELECTRICAL & COMPUTER ENGINEERING High-κ gate dielectric Interface-state density (Dit) Metal gate Mobility MOSFETs Tthermal stability 10.1109/LED.2006.875722 IEEE Electron Device Letters 27 6 498-501 EDLED 2014-10-07T04:23:29Z 2014-10-07T04:23:29Z 2006-06 Article Yu, X., Yu, M., Zhu, C. (2006-06). Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application. IEEE Electron Device Letters 27 (6) : 498-501. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2006.875722 07413106 http://scholarbank.nus.edu.sg/handle/10635/81940 000238070500024 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic High-κ gate dielectric
Interface-state density (Dit)
Metal gate
Mobility
MOSFETs
Tthermal stability
spellingShingle High-κ gate dielectric
Interface-state density (Dit)
Metal gate
Mobility
MOSFETs
Tthermal stability
Yu, X.
Yu, M.
Zhu, C.
Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application
description 10.1109/LED.2006.875722
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Yu, X.
Yu, M.
Zhu, C.
format Article
author Yu, X.
Yu, M.
Zhu, C.
author_sort Yu, X.
title Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application
title_short Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application
title_full Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application
title_fullStr Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application
title_full_unstemmed Advanced HfTaON/SiO2 gate stack with high mobility and low leakage current for low-standby-power application
title_sort advanced hftaon/sio2 gate stack with high mobility and low leakage current for low-standby-power application
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/81940
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