Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application

Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power application

Technical Digest - International Electron Devices Meeting, IEDM

Saved in:
Bibliographic Details
Main Authors: Yu, X., Zhu, C., Yu, M., Li, M.F., Chin, A., Tung, C.H., Gui, D., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83445
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:Technical Digest - International Electron Devices Meeting, IEDM

Similar Items