Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack

Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack

Technical Digest - International Electron Devices Meeting, IEDM

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Bibliographic Details
Main Authors: Whang, S.J., Lee, S.J., Gao, F., Wu, N., Zhu, C.X., Pan, J.S., Tang, L.J., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83762
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83762

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