Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
Technical Digest - International Electron Devices Meeting, IEDM
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2014
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sg-nus-scholar.10635-837622015-03-16T10:06:32Z Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack Whang, S.J. Lee, S.J. Gao, F. Wu, N. Zhu, C.X. Pan, J.S. Tang, L.J. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting, IEDM 307-310 TDIMD 2014-10-07T04:44:53Z 2014-10-07T04:44:53Z 2004 Conference Paper Whang, S.J.,Lee, S.J.,Gao, F.,Wu, N.,Zhu, C.X.,Pan, J.S.,Tang, L.J.,Kwong, D.L. (2004). Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack. Technical Digest - International Electron Devices Meeting, IEDM : 307-310. ScholarBank@NUS Repository. 01631918 http://scholarbank.nus.edu.sg/handle/10635/83762 NOT_IN_WOS Scopus |
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Technical Digest - International Electron Devices Meeting, IEDM |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Whang, S.J. Lee, S.J. Gao, F. Wu, N. Zhu, C.X. Pan, J.S. Tang, L.J. Kwong, D.L. |
format |
Conference or Workshop Item |
author |
Whang, S.J. Lee, S.J. Gao, F. Wu, N. Zhu, C.X. Pan, J.S. Tang, L.J. Kwong, D.L. |
spellingShingle |
Whang, S.J. Lee, S.J. Gao, F. Wu, N. Zhu, C.X. Pan, J.S. Tang, L.J. Kwong, D.L. Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack |
author_sort |
Whang, S.J. |
title |
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack |
title_short |
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack |
title_full |
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack |
title_fullStr |
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack |
title_full_unstemmed |
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack |
title_sort |
germanium p- & n-mosfets fabricated with novel surface passivation (plasma-ph 3 and thin aln) and tan/hfo 2 gate stack |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/83762 |
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