Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack

Technical Digest - International Electron Devices Meeting, IEDM

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Main Authors: Whang, S.J., Lee, S.J., Gao, F., Wu, N., Zhu, C.X., Pan, J.S., Tang, L.J., Kwong, D.L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83762
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-837622015-03-16T10:06:32Z Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack Whang, S.J. Lee, S.J. Gao, F. Wu, N. Zhu, C.X. Pan, J.S. Tang, L.J. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING Technical Digest - International Electron Devices Meeting, IEDM 307-310 TDIMD 2014-10-07T04:44:53Z 2014-10-07T04:44:53Z 2004 Conference Paper Whang, S.J.,Lee, S.J.,Gao, F.,Wu, N.,Zhu, C.X.,Pan, J.S.,Tang, L.J.,Kwong, D.L. (2004). Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack. Technical Digest - International Electron Devices Meeting, IEDM : 307-310. ScholarBank@NUS Repository. 01631918 http://scholarbank.nus.edu.sg/handle/10635/83762 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Technical Digest - International Electron Devices Meeting, IEDM
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Whang, S.J.
Lee, S.J.
Gao, F.
Wu, N.
Zhu, C.X.
Pan, J.S.
Tang, L.J.
Kwong, D.L.
format Conference or Workshop Item
author Whang, S.J.
Lee, S.J.
Gao, F.
Wu, N.
Zhu, C.X.
Pan, J.S.
Tang, L.J.
Kwong, D.L.
spellingShingle Whang, S.J.
Lee, S.J.
Gao, F.
Wu, N.
Zhu, C.X.
Pan, J.S.
Tang, L.J.
Kwong, D.L.
Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
author_sort Whang, S.J.
title Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
title_short Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
title_full Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
title_fullStr Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
title_full_unstemmed Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
title_sort germanium p- & n-mosfets fabricated with novel surface passivation (plasma-ph 3 and thin aln) and tan/hfo 2 gate stack
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83762
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