Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stack
Technical Digest - International Electron Devices Meeting, IEDM
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| Main Authors: | , , , , , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/83762 |
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| Institution: | National University of Singapore |