A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivation

• Main Authors: Wu, N., Zhang, Q., Zhu, C., Chan, D.S.H., Du, A., Balasubramanian, N., Li, M.F., Chin, A., Sin, J.K.O., Kwong, D.-L.
• 其他作者: ELECTRICAL & COMPUTER ENGINEERING
• 格式: Article
• 出版: 2014
• 在線閱讀: http://scholarbank.nus.edu.sg/handle/10635/81918
• 機構: National University of Singapore

10.1109/LED.2004.833842