Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process

• Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Yang, H., Sa, N., Liu, X.Y., Han, R.Q., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84155
• Institution: National University of Singapore

10.1109/ESSDER.2005.1546663