TDDB characteristics of ultra-thin HfN/HfO2 gate stack

by Yang, H., Sa, N., Tang, L., Liu, X., Kang, J., Han, R., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
Published 2014

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps

by Sa, N., Kang, J.F., Yang, H., Liu, X.Y., He, Y.D., Han, R.Q., Ren, C., Yu, H.Y., Chan, D.S.H., Kwong, D.-L.
Published 2014

Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications

by Kang, J.F., Yu, H.Y., Ren, C., Sa, N., Yang, H., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Published 2014

Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process

by Kang, J.F., Yu, H.Y., Ren, C., Yang, H., Sa, N., Liu, X.Y., Han, R.Q., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
Published 2014

Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process

by Kang, F.J., Yu, H.Y., Ren, C., Wang, X.P., Li, M.-F., Chan, D.S.H., Yeo, Y.-C., Sa, N., Yang, H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Published 2014