Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications

Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications

10.1149/1.2775163

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Bibliographic Details
Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Sa, N., Yang, H., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57329
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/57329

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