Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications

• Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Sa, N., Yang, H., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57329
• Institution: National University of Singapore

10.1149/1.2775163