Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications

10.1149/1.2775163

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Bibliographic Details
Main Authors:	Kang, J.F., Yu, H.Y., Ren, C., Sa, N., Yang, H., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57329
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57329
record_format	dspace
spelling	sg-nus-scholar.10635-573292024-11-11T07:32:12Z Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications Kang, J.F. Yu, H.Y. Ren, C. Sa, N. Yang, H. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2775163 Journal of the Electrochemical Society 154 11 H927-H932 JESOA 2014-06-17T03:04:57Z 2014-06-17T03:04:57Z 2007 Article Kang, J.F., Yu, H.Y., Ren, C., Sa, N., Yang, H., Li, M.-F., Chan, D.S.H., Liu, X.Y., Han, R.Q., Kwong, D.-L. (2007). Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications. Journal of the Electrochemical Society 154 (11) : H927-H932. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2775163 00134651 http://scholarbank.nus.edu.sg/handle/10635/57329 000249787900067 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.2775163
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kang, J.F. Yu, H.Y. Ren, C. Sa, N. Yang, H. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Kwong, D.-L.
format	Article
author	Kang, J.F. Yu, H.Y. Ren, C. Sa, N. Yang, H. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Kwong, D.-L.
spellingShingle	Kang, J.F. Yu, H.Y. Ren, C. Sa, N. Yang, H. Li, M.-F. Chan, D.S.H. Liu, X.Y. Han, R.Q. Kwong, D.-L. Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications
author_sort	Kang, J.F.
title	Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_short	Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_full	Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_fullStr	Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_full_unstemmed	Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications
title_sort	scalability and reliability characteristics of cvd hf o2 gate dielectrics with hfn electrodes for advanced cmos applications
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57329
_version_	1821201318028509184

Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applications

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