Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices

Thermally Robust High Quality HfN/HfO 2 Gate Stack for Advanced CMOS Devices

Technical Digest - International Electron Devices Meeting

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Bibliographic Details
Main Authors: Yu, H.Y., Kang, J.F., Chen, J.D., Ren, C., Hou, Y.T., Whang, S.J., Li, M.-F., Chan, D.S.H., Bera, K.L., Tung, C.H., Du, A., Kwong, D.-L.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81781
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/81781

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