A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stress

by Guan, H., Xu, Z., Cho, B.J., Li, M.F., He, Y.D.
Published 2014

Investigation of quasi-breakdown mechanism in ultra-thin gate oxides

by Guan, H., He, Y.D., Li, M.F., Cho, B.J., Dong, Z.
Published 2014

Conduction mechanism under quasibreakdown of ultrathin gate oxide

by He, Y.D., Guan, H., Li, M.F., Cho, B.J., Dong, Z.
Published 2014

Roles of primary hot hole and FN electron fluences in gate oxide breakdown

by Li, M.F., He, Y.D., Ma, S.G., Cho, B.J., Lo, K.F.
Published 2014

Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

by Guan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z.
Published 2014

Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV technique

by Guan, Hao, Cho, Byung Jin, Li, M.F., He, Y.D., Xu, Zhen, Dong, Zhong
Published 2014

Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method

by Ng, K.H., Jie, B.B., He, Y.D., Chim, W.K., Li, M.F., Lo, K.F.
Published 2014

Role of hole fluence in gate oxide breakdown

by Li, M.F., He, Y.D., Ma, S.G., Cho, B.-J., Lo, K.F., Xu, M.Z.
Published 2014

Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps

by Sa, N., Kang, J.F., Yang, H., Liu, X.Y., He, Y.D., Han, R.Q., Ren, C., Yu, H.Y., Chan, D.S.H., Kwong, D.-L.
Published 2014

Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

by Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W.
Published 2014

Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

by Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W.
Published 2014