Conduction mechanism under quasibreakdown of ultrathin gate oxide

Applied Physics Letters

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Bibliographic Details
Main Authors: He, Y.D., Guan, H., Li, M.F., Cho, B.J., Dong, Z.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/61959
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Institution: National University of Singapore