Conduction mechanism under quasibreakdown of ultrathin gate oxide
Applied Physics Letters
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sg-nus-scholar.10635-619592015-01-16T15:10:33Z Conduction mechanism under quasibreakdown of ultrathin gate oxide He, Y.D. Guan, H. Li, M.F. Cho, B.J. Dong, Z. ELECTRICAL ENGINEERING Applied Physics Letters 75 16 2432-2434 APPLA 2014-06-17T06:45:53Z 2014-06-17T06:45:53Z 1999-10-18 Article He, Y.D.,Guan, H.,Li, M.F.,Cho, B.J.,Dong, Z. (1999-10-18). Conduction mechanism under quasibreakdown of ultrathin gate oxide. Applied Physics Letters 75 (16) : 2432-2434. ScholarBank@NUS Repository. 00036951 http://scholarbank.nus.edu.sg/handle/10635/61959 NOT_IN_WOS Scopus |
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Applied Physics Letters |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING He, Y.D. Guan, H. Li, M.F. Cho, B.J. Dong, Z. |
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He, Y.D. Guan, H. Li, M.F. Cho, B.J. Dong, Z. |
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He, Y.D. Guan, H. Li, M.F. Cho, B.J. Dong, Z. Conduction mechanism under quasibreakdown of ultrathin gate oxide |
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He, Y.D. |
title |
Conduction mechanism under quasibreakdown of ultrathin gate oxide |
title_short |
Conduction mechanism under quasibreakdown of ultrathin gate oxide |
title_full |
Conduction mechanism under quasibreakdown of ultrathin gate oxide |
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Conduction mechanism under quasibreakdown of ultrathin gate oxide |
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Conduction mechanism under quasibreakdown of ultrathin gate oxide |
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conduction mechanism under quasibreakdown of ultrathin gate oxide |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/61959 |
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