Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

• Main Authors: Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W.
• Other Authors: ELECTRICAL ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/80818
• Institution: National University of Singapore

IEEE Electron Device Letters