Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

IEEE Electron Device Letters

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Bibliographic Details
Main Authors: Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80818
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Institution: National University of Singapore

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