Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices

10.1063/1.1416861

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Bibliographic Details
Main Authors: Hou, Y.T., Li, M.F., Jin, Y., Lai, W.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80360
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Institution: National University of Singapore