Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
10.1063/1.1416861
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sg-nus-scholar.10635-803602024-11-14T09:00:46Z Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices Hou, Y.T. Li, M.F. Jin, Y. Lai, W.H. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1416861 Journal of Applied Physics 91 1 258-264 JAPIA 2014-10-07T02:56:41Z 2014-10-07T02:56:41Z 2002-01-01 Article Hou, Y.T., Li, M.F., Jin, Y., Lai, W.H. (2002-01-01). Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices. Journal of Applied Physics 91 (1) : 258-264. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1416861 00218979 http://scholarbank.nus.edu.sg/handle/10635/80360 000172835600041 Scopus |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Hou, Y.T. Li, M.F. Jin, Y. Lai, W.H. |
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Hou, Y.T. Li, M.F. Jin, Y. Lai, W.H. |
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Hou, Y.T. Li, M.F. Jin, Y. Lai, W.H. Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices |
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Hou, Y.T. |
title |
Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices |
title_short |
Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices |
title_full |
Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices |
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Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices |
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Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices |
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direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/80360 |
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