Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices

10.1063/1.1416861

Saved in:
Bibliographic Details
Main Authors: Hou, Y.T., Li, M.F., Jin, Y., Lai, W.H.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/80360
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
id sg-nus-scholar.10635-80360
record_format dspace
spelling sg-nus-scholar.10635-803602024-11-14T09:00:46Z Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices Hou, Y.T. Li, M.F. Jin, Y. Lai, W.H. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1416861 Journal of Applied Physics 91 1 258-264 JAPIA 2014-10-07T02:56:41Z 2014-10-07T02:56:41Z 2002-01-01 Article Hou, Y.T., Li, M.F., Jin, Y., Lai, W.H. (2002-01-01). Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices. Journal of Applied Physics 91 (1) : 258-264. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1416861 00218979 http://scholarbank.nus.edu.sg/handle/10635/80360 000172835600041 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.1416861
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Hou, Y.T.
Li, M.F.
Jin, Y.
Lai, W.H.
format Article
author Hou, Y.T.
Li, M.F.
Jin, Y.
Lai, W.H.
spellingShingle Hou, Y.T.
Li, M.F.
Jin, Y.
Lai, W.H.
Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
author_sort Hou, Y.T.
title Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
title_short Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
title_full Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
title_fullStr Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
title_full_unstemmed Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
title_sort direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/80360
_version_ 1821216525516800000