Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

International Integrated Reliability Workshop Final Report

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Bibliographic Details
Main Authors: Guan, Hao, Li, M.F., Zhang, Yaohui, Cho, B.J., Jie, B.B., Xie, Joseph, Wang, J.L.F., Yen, Andrew C., Sheng, George T.T., Dong, Zhong, Li, Weidan
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/72868
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/72868

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