Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

• Main Authors: Guan, Hao, Li, M.F., Zhang, Yaohui, Cho, B.J., Jie, B.B., Xie, Joseph, Wang, J.L.F., Yen, Andrew C., Sheng, George T.T., Dong, Zhong, Li, Weidan
• Other Authors: ELECTRICAL ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/72868
• Institution: National University of Singapore

International Integrated Reliability Workshop Final Report