Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

International Integrated Reliability Workshop Final Report

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Bibliographic Details
Main Authors:	Guan, Hao, Li, M.F., Zhang, Yaohui, Cho, B.J., Jie, B.B., Xie, Joseph, Wang, J.L.F., Yen, Andrew C., Sheng, George T.T., Dong, Zhong, Li, Weidan
Other Authors:	INSTITUTE OF MICROELECTRONICS
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/72868
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-728682024-11-14T01:25:02Z Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan INSTITUTE OF MICROELECTRONICS ELECTRICAL ENGINEERING International Integrated Reliability Workshop Final Report 20-23 85RQA 2014-06-19T05:12:53Z 2014-06-19T05:12:53Z 1999 Conference Paper Guan, Hao,Li, M.F.,Zhang, Yaohui,Cho, B.J.,Jie, B.B.,Xie, Joseph,Wang, J.L.F.,Yen, Andrew C.,Sheng, George T.T.,Dong, Zhong,Li, Weidan (1999). Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique. International Integrated Reliability Workshop Final Report : 20-23. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/72868 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	International Integrated Reliability Workshop Final Report
author2	INSTITUTE OF MICROELECTRONICS
author_facet	INSTITUTE OF MICROELECTRONICS Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan
format	Conference or Workshop Item
author	Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan
spellingShingle	Guan, Hao Li, M.F. Zhang, Yaohui Cho, B.J. Jie, B.B. Xie, Joseph Wang, J.L.F. Yen, Andrew C. Sheng, George T.T. Dong, Zhong Li, Weidan Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
author_sort	Guan, Hao
title	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_short	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_full	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_fullStr	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_full_unstemmed	Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique
title_sort	predicting plasma charging damage in ultra thin gate oxide by using nondestructive dciv technique
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/72868
_version_	1821228231691337728

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

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