An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells

by Zhang, Y., Li, M., Liu, W., Yen, A.C., Sheng, T.T., Zhao, S.P., Wang, J.L.F.
Published 2014

Correlation between gate induced drain leakage and plasma induced interface traps

by Siguang, M., Yaohui, Z., Li, M.F., Li, W., Wang, J.L.F., Yen, A.C., Sheng, G.T.T.
Published 2014

Gate-induced drain leakage current enhanced by plasma charging damage

by Ma, S., Zhang, Y., Li, M.F., Li, W., Xie, J., Sheng, G.T.T., Yen, A.C., Wang, J.L.F.
Published 2014

Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

by Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W.
Published 2014

Nondestructive DCIV method to evaluate plasma charging damage in ultrathin gate oxides

by Guan, H., Zhang, Y., Jie, B.B., He, Y.D., Li, M.-F., Dong, Z., Xie, J., Wang, J.L.F., Yen, A.C., Sheng, G.T.T., Li, W.
Published 2014

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

by Guan, Hao, Li, M.F., Zhang, Yaohui, Cho, B.J., Jie, B.B., Xie, Joseph, Wang, J.L.F., Yen, Andrew C., Sheng, George T.T., Dong, Zhong, Li, Weidan
Published 2014

Predicting plasma charging damage in ultra thin gate oxide by using nondestructive DCIV technique

by Guan, Hao, Li, M.F., Zhang, Yaohui, Cho, B.J., Jie, B.B., Xie, Joseph, Wang, J.L.F., Yen, Andrew C., Sheng, George T.T., Dong, Zhong, Li, Weidan
Published 2014