An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells

An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wells

International Symposium on IC Technology, Systems and Applications

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Bibliographic Details
Main Authors: Zhang, Y., Li, M., Liu, W., Yen, A.C., Sheng, T.T., Zhao, S.P., Wang, J.L.F.
Other Authors: ELECTRICAL ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/81375
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/81375

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