Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy

Structural analysis of breakdown in ultrathin gate dielectrics using transmission electron microscopy

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

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Bibliographic Details
Main Authors: Pey, K.L., Tung, C.H., Tang, L.J., Ranjan, R., Radhakrishnan, M.K., Lin, W.H., Lombardo, S., Palumbo, F.
Other Authors: INSTITUTE OF MICROELECTRONICS
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/112981
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/112981

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