Energy dependence of interface trap density - investigated by the DCIV method

by Jie, B.B., Li, M.F., Lo, K.F.
Published 2014

Analysis of the DCIV peaks in electrically stressed pMOSFETs

by Jie, B.B., Chim, W.K., Li, M.-F., Lo, K.F.
Published 2014

Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors

by Jie, B.-B., Ng, K.-H., Li, M.-F., Lo, K.-F.
Published 2014

Roles of primary hot hole and FN electron fluences in gate oxide breakdown

by Li, M.F., He, Y.D., Ma, S.G., Cho, B.J., Lo, K.F.
Published 2014

New DC voltage-voltage method to measure the interface traps in deep sub-micron MOS transistors

by Jie, B.B., Li, M.F., Chim, W.K., Chan, D.S.H., Lo, K.F.
Published 2014

DC voltage-voltage method to measure the interface traps in sub-micron MOSTs

by Jie, B.B., Li, M.F., Chim, W.K., Chan, D.S.H., Lo, K.F.
Published 2014

Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method

by Ng, K.H., Jie, B.B., He, Y.D., Chim, W.K., Li, M.F., Lo, K.F.
Published 2014

Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure

by Jie, B.B., Li, M.F., Lou, C.L., Lo, K.F., Chim, W.K., Chan, D.S.H.
Published 2014

Investigation of interface traps in LDD pMOST's by the DCIV method

by Jie, B.B., Li, M.F., Lou, C.L., Chim, W.K., Chan, D.S.H., Lo, K.F.
Published 2014

Role of hole fluence in gate oxide breakdown

by Li, M.F., He, Y.D., Ma, S.G., Cho, B.-J., Lo, K.F., Xu, M.Z.
Published 2014

Investigation of interface traps in LDD pMOST's by the DCIV method

by Jie, B.B., Li, M.F., Lou, C.L., Chim, W.K., Chan, D.S.H., Lo, K.F.
Published 2014