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Lo, K.-F.
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Lo, K.-F.
Showing
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Lo, K.-F.
'
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1
Energy dependence of interface trap density - investigated by the DCIV method
by
Jie, B.B.
,
Li, M.F.
,
Lo
,
K.F
.
Published 2014
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2
Analysis of the DCIV peaks in electrically stressed pMOSFETs
by
Jie, B.B.
,
Chim, W.K.
,
Li, M.-F.
,
Lo
,
K.F
.
Published 2014
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3
Correlation between charge pumping method and direct-current current voltage method in p-type metal-oxide-semiconductor field-effect transistors
by
Jie, B.-B.
,
Ng, K.-H.
,
Li, M.-F.
,
Lo
,
K
.-
F
.
Published 2014
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4
Roles of primary hot hole and FN electron fluences in gate oxide breakdown
by
Li, M.F.
,
He, Y.D.
,
Ma, S.G.
,
Cho, B.J.
,
Lo
,
K.F
.
Published 2014
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5
New DC voltage-voltage method to measure the interface traps in deep sub-micron MOS transistors
by
Jie, B.B.
,
Li, M.F.
,
Chim, W.K.
,
Chan, D.S.H.
,
Lo
,
K.F
.
Published 2014
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6
DC voltage-voltage method to measure the interface traps in sub-micron MOSTs
by
Jie, B.B.
,
Li, M.F.
,
Chim, W.K.
,
Chan, D.S.H.
,
Lo
,
K.F
.
Published 2014
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7
Comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method
by
Ng, K.H.
,
Jie, B.B.
,
He, Y.D.
,
Chim, W.K.
,
Li, M.F.
,
Lo
,
K.F
.
Published 2014
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8
Direct-current measurements of interface traps and oxide charges in LDD pMOSFETs with an n-well structure
by
Jie, B.B.
,
Li, M.F.
,
Lou, C.L.
,
Lo
,
K.F
.
,
Chim, W.K.
,
Chan, D.S.H.
Published 2014
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9
Investigation of interface traps in LDD pMOST's by the DCIV method
by
Jie, B.B.
,
Li, M.F.
,
Lou, C.L.
,
Chim, W.K.
,
Chan, D.S.H.
,
Lo
,
K.F
.
Published 2014
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10
Role of hole fluence in gate oxide breakdown
by
Li, M.F.
,
He, Y.D.
,
Ma, S.G.
,
Cho, B.-J.
,
Lo
,
K.F
.
,
Xu, M.Z.
Published 2014
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11
Investigation of interface traps in LDD pMOST's by the DCIV method
by
Jie, B.B.
,
Li, M.F.
,
Lou, C.L.
,
Chim, W.K.
,
Chan, D.S.H.
,
Lo
,
K.F
.
Published 2014
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