Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process

10.1109/ESSDER.2005.1546663

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Bibliographic Details
Main Authors:	Kang, J.F., Yu, H.Y., Ren, C., Yang, H., Sa, N., Liu, X.Y., Han, R.Q., Li, M.-F., Chan, D.S.H., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84155
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-84155
record_format	dspace
spelling	sg-nus-scholar.10635-841552024-11-11T07:32:24Z Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process Kang, J.F. Yu, H.Y. Ren, C. Yang, H. Sa, N. Liu, X.Y. Han, R.Q. Li, M.-F. Chan, D.S.H. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/ESSDER.2005.1546663 Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005 375-378 2014-10-07T04:49:26Z 2014-10-07T04:49:26Z 2005 Conference Paper Kang, J.F., Yu, H.Y., Ren, C., Yang, H., Sa, N., Liu, X.Y., Han, R.Q., Li, M.-F., Chan, D.S.H., Kwong, D.-L. (2005). Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process. Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference 2005 : 375-378. ScholarBank@NUS Repository. https://doi.org/10.1109/ESSDER.2005.1546663 0780392035 http://scholarbank.nus.edu.sg/handle/10635/84155 000236176200086 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/ESSDER.2005.1546663
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Kang, J.F. Yu, H.Y. Ren, C. Yang, H. Sa, N. Liu, X.Y. Han, R.Q. Li, M.-F. Chan, D.S.H. Kwong, D.-L.
format	Conference or Workshop Item
author	Kang, J.F. Yu, H.Y. Ren, C. Yang, H. Sa, N. Liu, X.Y. Han, R.Q. Li, M.-F. Chan, D.S.H. Kwong, D.-L.
spellingShingle	Kang, J.F. Yu, H.Y. Ren, C. Yang, H. Sa, N. Liu, X.Y. Han, R.Q. Li, M.-F. Chan, D.S.H. Kwong, D.-L. Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
author_sort	Kang, J.F.
title	Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
title_short	Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
title_full	Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
title_fullStr	Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
title_full_unstemmed	Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process
title_sort	scalability and reliability of tan/hfn/hfo2 gate stacks fabricated by a high temperature process
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84155
_version_	1821230455548018688

Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature process

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