Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

10.1063/1.1875733

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Bibliographic Details
Main Authors: Gao, F., Lee, S.J., Pan, J.S., Tang, L.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83125
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83125

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