Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

10.1063/1.1875733

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Bibliographic Details
Main Authors:	Gao, F., Lee, S.J., Pan, J.S., Tang, L.J., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/83125
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-83125
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spelling	sg-nus-scholar.10635-831252023-10-26T20:37:03Z Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric Gao, F. Lee, S.J. Pan, J.S. Tang, L.J. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1875733 Applied Physics Letters 86 11 1-3 APPLA 2014-10-07T04:37:33Z 2014-10-07T04:37:33Z 2005-03-14 Article Gao, F., Lee, S.J., Pan, J.S., Tang, L.J., Kwong, D.-L. (2005-03-14). Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric. Applied Physics Letters 86 (11) : 1-3. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1875733 00036951 http://scholarbank.nus.edu.sg/handle/10635/83125 000228050700099 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.1875733
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gao, F. Lee, S.J. Pan, J.S. Tang, L.J. Kwong, D.-L.
format	Article
author	Gao, F. Lee, S.J. Pan, J.S. Tang, L.J. Kwong, D.-L.
spellingShingle	Gao, F. Lee, S.J. Pan, J.S. Tang, L.J. Kwong, D.-L. Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
author_sort	Gao, F.
title	Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
title_short	Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
title_full	Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
title_fullStr	Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
title_full_unstemmed	Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
title_sort	surface passivation using ultrathin aln x film for ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/83125
_version_	1781784308519796736

Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

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