Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

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Bibliographic Details
Main Authors: Lee, S., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Online Access:http://scholarbank.nus.edu.sg/handle/10635/82975
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Institution: National University of Singapore