Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Saved in:

Bibliographic Details
Main Authors:	Lee, S., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Hafnium oxide Reliability TDDB
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/82975
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-82975
record_format	dspace
spelling	sg-nus-scholar.10635-829752015-04-11T07:19:09Z Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric Lee, S. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING Hafnium oxide Reliability TDDB Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 2 427-431 JAPND 2014-10-07T04:35:44Z 2014-10-07T04:35:44Z 2004-02 Article Lee, S.,Kwong, D.-L. (2004-02). Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 43 (2) : 427-431. ScholarBank@NUS Repository. 00214922 http://scholarbank.nus.edu.sg/handle/10635/82975 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
topic	Hafnium oxide Reliability TDDB
spellingShingle	Hafnium oxide Reliability TDDB Lee, S. Kwong, D.-L. Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
description	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Lee, S. Kwong, D.-L.
format	Article
author	Lee, S. Kwong, D.-L.
author_sort	Lee, S.
title	Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
title_short	Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
title_full	Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
title_fullStr	Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
title_full_unstemmed	Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric
title_sort	reliability characteristics of poly si-gated high quality chemical vapor deposition hafnium oxide gate dielectric
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/82975
_version_	1681089350762233856

Reliability Characteristics of Poly Si-gated High Quality Chemical Vapor Deposition Hafnium Oxide Gate Dielectric

Similar Items