Surface passivation using ultrathin AlN x film for Ge-metal-oxide-semiconductor devices with hafnium oxide gate dielectric

• Main Authors: Gao, F., Lee, S.J., Pan, J.S., Tang, L.J., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83125
• Institution: National University of Singapore

10.1063/1.1875733