Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric

Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric

10.1063/1.2202752

Saved in:
Bibliographic Details
Main Authors: Wang, S.J., Chai, J.W., Dong, Y.F., Feng, Y.P., Sutanto, N., Pan, J.S., Huan, A.C.H.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96329
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/96329

Similar Items