Effect of nitrogen incorporation on the electronic structure and thermal stability of HfO2 gate dielectric
10.1063/1.2202752
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Main Authors: | Wang, S.J., Chai, J.W., Dong, Y.F., Feng, Y.P., Sutanto, N., Pan, J.S., Huan, A.C.H. |
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Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/96329 |
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Institution: | National University of Singapore |
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