Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering

Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering

10.1063/1.1651652

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Bibliographic Details
Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83193
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/83193

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