Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering

• Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/83193
• Institution: National University of Singapore

10.1063/1.1651652