Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering

10.1063/1.1651652

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Bibliographic Details
Main Authors: Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/83193
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-831932024-11-12T21:59:46Z Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Hu, H. Lim, H.F. Wang, W.D. Gui, D. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1651652 Applied Physics Letters 84 9 1588-1590 APPLA 2014-10-07T04:38:23Z 2014-10-07T04:38:23Z 2004-03-01 Article Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L. (2004-03-01). Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering. Applied Physics Letters 84 (9) : 1588-1590. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1651652 00036951 http://scholarbank.nus.edu.sg/handle/10635/83193 000189264100052 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.1651652
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Kang, J.F.
Yu, H.Y.
Ren, C.
Li, M.-F.
Chan, D.S.H.
Hu, H.
Lim, H.F.
Wang, W.D.
Gui, D.
Kwong, D.-L.
format Article
author Kang, J.F.
Yu, H.Y.
Ren, C.
Li, M.-F.
Chan, D.S.H.
Hu, H.
Lim, H.F.
Wang, W.D.
Gui, D.
Kwong, D.-L.
spellingShingle Kang, J.F.
Yu, H.Y.
Ren, C.
Li, M.-F.
Chan, D.S.H.
Hu, H.
Lim, H.F.
Wang, W.D.
Gui, D.
Kwong, D.-L.
Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
author_sort Kang, J.F.
title Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
title_short Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
title_full Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
title_fullStr Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
title_full_unstemmed Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
title_sort thermal stability of nitrogen incorporated in hfn xo y gate dielectrics prepared by reactive sputtering
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/83193
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