Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering
10.1063/1.1651652
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sg-nus-scholar.10635-831932024-11-12T21:59:46Z Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Hu, H. Lim, H.F. Wang, W.D. Gui, D. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1651652 Applied Physics Letters 84 9 1588-1590 APPLA 2014-10-07T04:38:23Z 2014-10-07T04:38:23Z 2004-03-01 Article Kang, J.F., Yu, H.Y., Ren, C., Li, M.-F., Chan, D.S.H., Hu, H., Lim, H.F., Wang, W.D., Gui, D., Kwong, D.-L. (2004-03-01). Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering. Applied Physics Letters 84 (9) : 1588-1590. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1651652 00036951 http://scholarbank.nus.edu.sg/handle/10635/83193 000189264100052 Scopus |
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10.1063/1.1651652 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Hu, H. Lim, H.F. Wang, W.D. Gui, D. Kwong, D.-L. |
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Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Hu, H. Lim, H.F. Wang, W.D. Gui, D. Kwong, D.-L. |
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Kang, J.F. Yu, H.Y. Ren, C. Li, M.-F. Chan, D.S.H. Hu, H. Lim, H.F. Wang, W.D. Gui, D. Kwong, D.-L. Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering |
author_sort |
Kang, J.F. |
title |
Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering |
title_short |
Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering |
title_full |
Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering |
title_fullStr |
Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering |
title_full_unstemmed |
Thermal stability of nitrogen incorporated in HfN xO y gate dielectrics prepared by reactive sputtering |
title_sort |
thermal stability of nitrogen incorporated in hfn xo y gate dielectrics prepared by reactive sputtering |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/83193 |
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1821213800707129344 |