Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate
10.1063/1.1795369
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sg-nus-scholar.10635-822452023-10-30T22:33:09Z Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate Yu, X. Zhu, C. Li, M.F. Chin, A. Du, A.Y. Wang, W.D. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1795369 Applied Physics Letters 85 14 2893-2895 APPLA 2014-10-07T04:27:05Z 2014-10-07T04:27:05Z 2004-10-04 Article Yu, X., Zhu, C., Li, M.F., Chin, A., Du, A.Y., Wang, W.D., Kwong, D.-L. (2004-10-04). Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate. Applied Physics Letters 85 (14) : 2893-2895. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1795369 00036951 http://scholarbank.nus.edu.sg/handle/10635/82245 000224547300073 Scopus |
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National University of Singapore |
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NUS Library |
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Asia |
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Singapore Singapore |
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| description |
10.1063/1.1795369 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Yu, X. Zhu, C. Li, M.F. Chin, A. Du, A.Y. Wang, W.D. Kwong, D.-L. |
| format |
Article |
| author |
Yu, X. Zhu, C. Li, M.F. Chin, A. Du, A.Y. Wang, W.D. Kwong, D.-L. |
| spellingShingle |
Yu, X. Zhu, C. Li, M.F. Chin, A. Du, A.Y. Wang, W.D. Kwong, D.-L. Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate |
| author_sort |
Yu, X. |
| title |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate |
| title_short |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate |
| title_full |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate |
| title_fullStr |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate |
| title_full_unstemmed |
Electrical characteristics and suppressed boron penetration behavior of thermally stable HfTaO gate dielectrics with polycrystalline-silicon gate |
| title_sort |
electrical characteristics and suppressed boron penetration behavior of thermally stable hftao gate dielectrics with polycrystalline-silicon gate |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/82245 |
| _version_ |
1781784089800474624 |