Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping

Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping

Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The...

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Main Authors: Wu, L., Wang, Zhongrui, Zhu, W. G., Du, A. Y., Fang, Z., Tran, Xuan Anh, Liu, W. J., Zhang, K. L., Yu, Hongyu
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/98992
http://hdl.handle.net/10220/13474
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-989922020-03-07T14:00:29Z Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping Wu, L. Wang, Zhongrui Zhu, W. G. Du, A. Y. Fang, Z. Tran, Xuan Anh Liu, W. J. Zhang, K. L. Yu, Hongyu School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy. 2013-09-16T06:07:06Z 2019-12-06T20:02:06Z 2013-09-16T06:07:06Z 2019-12-06T20:02:06Z 2012 2012 Journal Article Wang, Z., Zhu, W. G., Du, A. Y., Wu, L., Fang, Z., Tran, X. A., et al. (2012). Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping. IEEE transactions on electron devices, 59(4), 1203-1208. 0018-9383 https://hdl.handle.net/10356/98992 http://hdl.handle.net/10220/13474 10.1109/TED.2012.2182770 en IEEE transactions on electron devices © 2012 IEEE
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Wu, L.
Wang, Zhongrui
Zhu, W. G.
Du, A. Y.
Fang, Z.
Tran, Xuan Anh
Liu, W. J.
Zhang, K. L.
Yu, Hongyu
Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
description Atomic layer deposited (ALD) HfO2 resistive-switching random access memory devices with high uniformity, self-compliance, and forming-free behavior are demonstrated. Through comparative experiments, we find that appropriate deposition techniques and annealing conditions lead to self-compliance. The forming-free behavior originates from the oxygen deficiency due to the metal doping layer. High uniformity, by first-principle calculation, is caused by Ge doping in the HfO2, which lowers the oxygen-vacancy formation energy.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Wu, L.
Wang, Zhongrui
Zhu, W. G.
Du, A. Y.
Fang, Z.
Tran, Xuan Anh
Liu, W. J.
Zhang, K. L.
Yu, Hongyu
format Article
author Wu, L.
Wang, Zhongrui
Zhu, W. G.
Du, A. Y.
Fang, Z.
Tran, Xuan Anh
Liu, W. J.
Zhang, K. L.
Yu, Hongyu
author_sort Wu, L.
title Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
title_short Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
title_full Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
title_fullStr Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
title_full_unstemmed Highly uniform, self-compliance, and forming-free ALD HfO2-based RRAM with Ge doping
title_sort highly uniform, self-compliance, and forming-free ald hfo2-based rram with ge doping
publishDate 2013
url https://hdl.handle.net/10356/98992
http://hdl.handle.net/10220/13474
_version_ 1681048548977672192

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