Transport properties of HfO2−x based resistive-switching memories
Transport measurements of both the dc and the low-frequency ac are performed on Pt/HfO2−x/TiN resistiveswitching memory cells at various temperatures. The conductance of the pristine cells has a power law ωST N relationship with temperature and frequency. To account for the much larger conductance o...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2013
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| Online Access: | https://hdl.handle.net/10356/99686 http://hdl.handle.net/10220/9146 |
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| Institution: | Nanyang Technological University |
| Language: | English |