A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

10.1109/LED.2010.2099205

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Bibliographic Details
Main Authors:	Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	HfOx resistive random access memory (RRAM) unipolar resistive switching (RS)
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/81875
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-81875
record_format	dspace
spelling	sg-nus-scholar.10635-818752024-11-08T16:45:21Z A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration Tran, X.A. Yu, H.Y. Yeo, Y.C. Wu, L. Liu, W.J. Wang, Z.R. Fang, Z. Pey, K.L. Sun, X.W. Du, A.Y. Nguyen, B.Y. Li, M.F. ELECTRICAL & COMPUTER ENGINEERING HfOx resistive random access memory (RRAM) unipolar resistive switching (RS) 10.1109/LED.2010.2099205 IEEE Electron Device Letters 32 3 396-398 EDLED 2014-10-07T04:22:44Z 2014-10-07T04:22:44Z 2011-03 Article Tran, X.A., Yu, H.Y., Yeo, Y.C., Wu, L., Liu, W.J., Wang, Z.R., Fang, Z., Pey, K.L., Sun, X.W., Du, A.Y., Nguyen, B.Y., Li, M.F. (2011-03). A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration. IEEE Electron Device Letters 32 (3) : 396-398. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2010.2099205 07413106 http://scholarbank.nus.edu.sg/handle/10635/81875 000287658400058 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	HfOx resistive random access memory (RRAM) unipolar resistive switching (RS)
spellingShingle	HfOx resistive random access memory (RRAM) unipolar resistive switching (RS) Tran, X.A. Yu, H.Y. Yeo, Y.C. Wu, L. Liu, W.J. Wang, Z.R. Fang, Z. Pey, K.L. Sun, X.W. Du, A.Y. Nguyen, B.Y. Li, M.F. A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
description	10.1109/LED.2010.2099205
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Tran, X.A. Yu, H.Y. Yeo, Y.C. Wu, L. Liu, W.J. Wang, Z.R. Fang, Z. Pey, K.L. Sun, X.W. Du, A.Y. Nguyen, B.Y. Li, M.F.
format	Article
author	Tran, X.A. Yu, H.Y. Yeo, Y.C. Wu, L. Liu, W.J. Wang, Z.R. Fang, Z. Pey, K.L. Sun, X.W. Du, A.Y. Nguyen, B.Y. Li, M.F.
author_sort	Tran, X.A.
title	A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
title_short	A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
title_full	A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
title_fullStr	A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
title_full_unstemmed	A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration
title_sort	high-yield hfox-based unipolar resistive ram employing ni electrode compatible with si-diode selector for crossbar integration
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/81875
_version_	1821198340832886784

A high-yield HfOx-based unipolar resistive ram employing Ni electrode compatible with Si-diode selector for crossbar integration

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