Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides

• Main Authors: Chen, Y. S., Kang, J. F., Chen, B., Liu, L. F., Liu, X. Y., Wang, Y. Y., Wu, L., Wang, J. Y., Chen, Q., Wang, E. G., Gao, Bin, Yu, Hongyu
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/95990; http://hdl.handle.net/10220/11385
• Institution: Nanyang Technological University

A microscopic mechanism for the unipolar resistive switching phenomenon in nickel oxides is proposed based on the thermal decomposition of oxygen ions from oxygen-rich clusters and their recombination with electron-depleted vacancies induced by local electric field in conductive filaments. The propo...